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  4. ESR of defects in III-V compounds
 
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1983
Conference Paper
Title

ESR of defects in III-V compounds

Other Title
ESR von Defektstellen in III-V Verbindungen
Author(s)
Schneider, J.
Mainwork
Defects in semiconductors II  
Conference
Symposium Defects in Semiconductors 1982  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • 3-5 Verbindungen

  • Antisitedefekt

  • Defektstelle(tief)

  • Elektronenspinresonanz

  • GaAs

  • GaP

  • InP

  • Materialtechnologie

  • Übergangsmetall(3d)

  • Zentrum(strahlungsbedingt)

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