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  4. Aspects of barium contamination in high dielectric dynamic random-access memories
 
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2000
Journal Article
Title

Aspects of barium contamination in high dielectric dynamic random-access memories

Author(s)
Boubekeur, H.
Hopfner, J.
Mikolajick, T.
Dehm, C.
Frey, L.
Ryssel, H.
Journal
Journal of the Electrochemical Society  
DOI
10.1149/1.1394057
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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