• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Laser emission in indirect-gap AlxGa1-xAs
 
  • Details
  • Full
Options
1995
Conference Paper
Title

Laser emission in indirect-gap AlxGa1-xAs

Other Title
Laser-Emission von AlxGa1-xAs mit indirekter Bandlücke
Abstract
For the first time we demonstrate optically pumped laser emission up to room temperature related to elctrone-hole-recombination at the indirect fundamental bandgap in Aldeepx Gadeep1-x As.
Author(s)
Westphäling, R.
Wörner, A.
Kalt, H.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
22nd International Conference on the Physics of Semiconductors 1995. Vol. 1  
Conference
International Conference on the Physics of Semiconductors 1995  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V Halbleiter

  • III-V semiconductors

  • optical properties

  • optische Eigenschaft

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024