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  4. Toward Energy-Efficient Ferroelectric Field-Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO₂ Films
 
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2024
Journal Article
Title

Toward Energy-Efficient Ferroelectric Field-Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO₂ Films

Author(s)
Lehninger, David
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Sünbül, Ayse
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Seidel, Konrad  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Lederer, Maximilian
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Journal
Physica status solidi. A  
Project(s)
Embedded storage elements on next MCU generation ready for AI on the edge  
Funding(s)
H2020-EU.2.1.1.  
Funder
European Commission  
Open Access
DOI
10.1002/pssa.202300712
Additional full text version
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Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Keyword(s)
  • coercive fields

  • energy efficiency

  • ferroelectrics

  • hafnium oxide

  • memories

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