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  4. Properties of ALD ferroelectric Si-doped HfO2 characterized with noncontact Corona-Kelvin metrology
 
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2017
Presentation
Title

Properties of ALD ferroelectric Si-doped HfO2 characterized with noncontact Corona-Kelvin metrology

Title Supplement
Presentation held at 17th International Conference on Atomic Layer Deposition, ALD 2017, 15th - 18th July 2017, Denver, Colorado, USA
Author(s)
Polakowski, Patrick
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Müller, Johannes  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Marinskiy, Dmitriy
Semilab Semiconductor Physics Laboratory Co. Ltd. <Budapest, Hungary>
Findlay, Andrew
Semilab Semiconductor Physics Laboratory Co. Ltd. <Budapest, Hungary>
Edelman, Piotr
Semilab Semiconductor Physics Laboratory Co. Ltd. <Budapest, Hungary>
Wilson, Marshall
Semilab Semiconductor Physics Laboratory Co. Ltd. <Budapest, Hungary>
Lagowski, Jacek
Semilab Semiconductor Physics Laboratory Co. Ltd. <Budapest, Hungary>
Metzger, Joachim
Globalfoundries <Dresden>
Binder, Robert
Globalfoundries <Dresden>
Conference
International Conference on Atomic Layer Deposition (ALD) 2017  
Request publication:
bibliothek@ipms.fraunhofer.de
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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