4-Pole 20-nm InGaAs HEMT-on-Silicon Technology for Enhanced Breakdown Voltage Achieving Fmax > 650 GHz

We present, for the first time, an RF/mixed-signal technology based on 20-nm In0.8Ga0.2As HEMTs featuring backside gate and field plate architectures. It targets applications including digital logic to control monolithically integrated front ends as well as key components such as Power Amplifier MMICs that require significantly improved output power and linearity. Improved on-state breakdown voltage with Enhanced High Voltage HEMTs through synergistic Backside Field Plate and drain-side gate-recess engineering are fabricated and measured. The enhanced HV-HEMT achieves an ID,max of 700 mA/mm, a peak transconductance of 2250 mS/mm at VDS = 1 V, a gds of 15 mS/mm at VGS(gm,peak), RON = 0.5 Ω∙mm, an fT ~ 300 GHz and an fmax > 650 GHz. Moreover, RTL-based inverter and NAND gates are demonstrated. This technology could leverage both digital control and analog capabilities, with the potential for increased output power on a single chip for the next generation of MMICs.