High-frequency electrical measurement and parameter extraction of InP-based photodetectors up to 100 GHz

High-frequency measurement and the extraction of an extended small-signal equivalent circuit of a heterostructure InP-based photodiode in the frequency range of 45 MHz to 100 GHz was performed. Photodetectors of this type were monolithically integrated and successfully fabricated to form twin-type photodetector OEICs demonstrating a bandwidth of 45 GHz. The work describes the small-signal equivalent circuit of a photodiode, with a size of 5 µm x 20 µm, up to the frequency range of 100 GHz.