Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO

In this work, the electrical characteristics and the reliability of 80nm thick deposited oxides annealed in NO and N2O on the 4H-SiC Si-face for gate oxide application in MOS devices is analyzed by C-V, 1-V measurements and by constant current stress. Compared to thermally grown oxides, the deposited oxides annealed in N2O or NO showed improved electrical properties. D-it-values lower than 10(11) cm(-2)eV(-1) have been achieved for the NO sample. The intrinsic Q(BD)-values of deposited and annealed oxides are one order of magnitudes higher than the highest values reported for thermally grown oxides. Also MOSFETS were fabricated with a channel mobility of 20.05 cm(2)/VS for the NO annealed deposited oxide. Furthermore annealing in NO is preferred to annealing in N2O regarding mu(FE)- and Q(BD)-values.