Radiation induced loss in undoped and f-doped silica

The radiation resistance of undoped and F-undoped synthetic silica is investigated at 840 nm and 1308 nm wavelength. At both wavelengths the F-doped silica shows improved radiation resistance compared to that of the undoped water-free silica. The recovery behaviour after pulsed irradiation of both materials can be devided into three phases with different recovery coefficients. Our results are compared with those from earlier work. The radiation resistance of undoped and F-doped synthetic silica is investigated at 840 nm and 1308 nm wavelength. At both wavelengths the F-doped silica shows improved radiation resistance compared to that of the undoped water-free silica. The recovery behaviour after pulsed irradiation of both materials can be devided into three phases with different recovery coefficients. Our results are compared with those from earlier work. (INT)