Compact high gain low 60 to 80 GHz amplifiers on GaAs

Very compact 2-stage narrow band LNAs with more than 20dB gain between 60 and 80 GHz have been fabricated using cascodes as active elements. On wafer S-parameter measurements showed a maximum gain over 30 dB at 67 GHz. To the best of our knowledge this is the highest gain ever reported for a two-stage LNA in that frequency range. CPW technology is used to allow for dense packing of the various circuit elements. The chip size including all matching and bias networks is only 0.83 mm2 (0.59 mm x 1.4 mm).