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1993
Conference Paper
Title
InP based InGaAs-JFET with delta-doped channel
Abstract
An InP based junction field-effect transistor (JFET) employing a double delta-doped InGaAs channel was designed and fabricated. This new combination of delta-doping and InGaAs material properties promises various advantages over delta-doped GaAs-FETs. Electrical measurements on 1 mu m*50 mu m JFETs exhibited a high transconductance of 520 mS/mm being constant over a wide range of gate voltages. A transit frequency and a maximum oscillation frequency of 28 and 39 GHz, respectively, have been obtained.
Language
English
Keyword(s)