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  4. Picosecond electron and hole transport in metal-semiconductor-metal photodetectors.
 
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1992
Journal Article
Title

Picosecond electron and hole transport in metal-semiconductor-metal photodetectors.

Other Title
Pikosekundentransport von Elektronen und Löchern in einem Metall-Halbleiter-Metall-Photodetektor
Abstract
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal-semiconductor-metal photodiodes reveals the influence of field screening and optical phonon scattering on the frequency bandwidth of these detectors. The experimental results agree with theoretical predictions of a selfconsistent two-dimensional Monte Carlo calculation.
Author(s)
Kuhl, J.
Klingenstein, M.
Axmann, A.
Moglestue, C.
Rosenzweig, Josef  
Journal
Semiconductor Science and Technology  
DOI
10.1088/0268-1242/7/3B/037
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • electron

  • Elektron

  • GaAs

  • hole

  • Loch

  • metal-semiconductor-metal photodetector

  • Metall-Halbleiter-Metall-Photodetektor

  • picosecond transport

  • Pikosekundentransport

  • selbstkonsistent

  • self-consistent

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