Vacancy defect formation in PA-MBE grown C-doped InN

Positron annihilation spectroscopy has been used to study vacancy defects formed in PA-MBE grown carbondoped indium nitride. The carbon concentration of doped samples varied in the range from 1.5 × 10(17) cm(-3) to 2.5 × 10(18) cm(-3). The experimental data indicates the existence of vacancy complexes containing both In and N vacancies, with the V(In) component dominant from the positron annihilation point of view. The vacancy content increases along with increasing carbon content from less than 1 × 10(16) cm(-3) in the undoped sample up to at least 4 × 10(16) cm(-3) in the doped samples.