Electromagnetic switching cell design for fast switching semiconductors

This paper gives an overview of the parasitic inductances and capacitances of the switching cell in half-bridge topology and weights their importance for the EM behavior of the power module. The example shows in detail how the considerations can be implemented in the layout of the switching cell and the complementary evaluation board. The resulting switching curves show a few nanoseconds fast commutation, parasitic turn-on-free and nearly oscillation-free switching of 30A current at 450V DC link voltage.