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  4. New results on high-field transport in semiconductor superlattices
 
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2003
Conference Paper
Title

New results on high-field transport in semiconductor superlattices

Other Title
Neue Ergebnisse des Transorts in hohen Feldern in Halbleiter-Übergittern
Abstract
The optical properties of an electrically biased semiconductor superlattice are strongly influenced by coupling to other bands. As these coupling mechanisms depend on the strength of the applied electric field, we find a distinct variation in transition line broadening, dephasing time and spatial extension of the wavefunction. The fundamental Bloch-oscillating transport in a periodic structure is drastically modified and exhibits a strong damping with a surprising revival of polarization coherence which reappears on a picosecond scale.
Author(s)
Holfeld, C.P.
Rosam, B.
Meinhold, D.
Glutsch, S.
Schäfer, W.
Zhang, J.
Glück, M.
Korsch, H.J.
Rossi, F.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leo, K.
Mainwork
Physics of semiconductors 2002  
Conference
International Conference on the Physics of Semiconductors (ICPS) 2002  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • superlattice

  • Übergitter

  • III-V semiconductor

  • III-V Halbleiter

  • optical property

  • optische Eigenschaft

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