Crystalline SiC deposited by APCVD as a multifunctional intermediate layer for the recrystallised wafer equivalent

The Recrystallised Wafer Equivalent (RexWE) is an approach to substitute high purity silicon wafers with cost effective sintered ceramic compounds. This design unites the potential to significantly reduce wafer costs with very large wafer sizes. To separate the highly contaminated substrate material from the active silicon layer we implemented a crystalline 3C-SiC intermediate layer (IL), which is deposited by APCVD at 1100°C. This IL combines thermal and chemical stability above 1420°C, good electrical conductivity, textured surfaces and diffusion barrier properties against all types of metallic contaminations. The deposited SiC-IL was hereby doped with nitrogen (N2) during the deposition and basic crystallographic, optical and electrical investigations were performed.