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  4. Establishing the "native oxide barrier layer for selective electroplated" metallization for bifacial silicon heterojunction solar cells
 
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2019
Conference Paper
Titel

Establishing the "native oxide barrier layer for selective electroplated" metallization for bifacial silicon heterojunction solar cells

Abstract
The metallization of silicon heterojunction (SHJ) solar cells by selective Cu electroplating onto a structured PVD Cu-Al seed and mask layer stack is established by using the native oxide of the Al as insulating barrier. The NOBLE metallization (native oxide barrier layer for selective electroplating) allows reaching a first promising efficiency of 20.0% on full area SHJ solar cell with low contact resistivity on ITO. The approach features several advantages: low temperature processing, high metal conductivity of plated copper, no organic making and low material costs (almost Ag-free).
Author(s)
Hatt, Thibaud
Fraunhofer-Institut für Solare Energiesysteme ISE
Bartsch, Jonas
Fraunhofer-Institut für Solare Energiesysteme ISE
Kluska, Sven
Fraunhofer-Institut für Solare Energiesysteme ISE
Glatthaar, Markus
Fraunhofer-Institut für Solare Energiesysteme ISE
Hauptwerk
SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics
Project(s)
DISC
PV-BAT400
Funder
European Commission EC
Bundesministerium für Wirtschaft und Energie BMWi (Deutschland)
Konferenz
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) 2019
DOI
10.1063/1.5123832
File(s)
N-555765.pdf (1.47 MB)
Language
English
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Fraunhofer-Institut für Solare Energiesysteme ISE
Tags
  • Plating

  • silicon hetero junction solar cell

  • TCOs

  • Photovoltaik

  • Silicium-Photovoltaik

  • Kontaktierung und Strukturierung

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