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2019
Conference Paper
Title
Establishing the "native oxide barrier layer for selective electroplated" metallization for bifacial silicon heterojunction solar cells
Abstract
The metallization of silicon heterojunction (SHJ) solar cells by selective Cu electroplating onto a structured PVD Cu-Al seed and mask layer stack is established by using the native oxide of the Al as insulating barrier. The NOBLE metallization (native oxide barrier layer for selective electroplating) allows reaching a first promising efficiency of 20.0% on full area SHJ solar cell with low contact resistivity on ITO. The approach features several advantages: low temperature processing, high metal conductivity of plated copper, no organic making and low material costs (almost Ag-free).
Project(s)
PV-BAT400