Implanted-collector InGaAsP/InP heterojunction bipolar transistor

A novel structure for an InP-based heterojunction bipolar transistor is proposed and demonstrated which not only provides technological advantages over conventional structures but is also particularly suited for high-frequency applications due to the inherent reduction of parasitic time constants. The main structural feature of this transistor is an embedded rather than a mesa type collector which was created by ion implantation. Large-area devices showed well-behaved static I/V characteristics with a current gain of 250 and emitter-collector breakdown voltages between 3 V and 6 V.