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  4. InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
 
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2011
Conference Paper
Title

InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications

Abstract
Wideband ampli\'02ers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband ampli\'02er MMICs operate up to a frequency of 18 GHz. A number of measurements have been performed, including small signal S-parameter and large signal power measurements. To our knowledge, these are the \'02rst MMICs based on InAlGaN/GaN HEMTs epitaxy for wideband applications in microstrip transmission line technology.
Author(s)
Schuh, P.
Sledzik, H.
Oppermann, M.
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kühn, Jutta  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lim, T.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Waltereit, Patrick  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
6th European Microwave Integrated Circuits Conference, EuMIC 2011. Proceedings  
Conference
European Microwave Integrated Circuits Conference (EuMIC) 2011  
European Microwave Week (EuMW) 2011  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InAIGaN

  • GaN

  • MMIC

  • high-power amplifier

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