InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
Abstract
Wideband ampli\'02ers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband ampli\'02er MMICs operate up to a frequency of 18 GHz. A number of measurements have been performed, including small signal S-parameter and large signal power measurements. To our knowledge, these are the \'02rst MMICs based on InAlGaN/GaN HEMTs epitaxy for wideband applications in microstrip transmission line technology.
