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  4. InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
 
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2011
Conference Paper
Titel

InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications

Abstract
Wideband ampli\'02ers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband ampli\'02er MMICs operate up to a frequency of 18 GHz. A number of measurements have been performed, including small signal S-parameter and large signal power measurements. To our knowledge, these are the \'02rst MMICs based on InAlGaN/GaN HEMTs epitaxy for wideband applications in microstrip transmission line technology.
Author(s)
Schuh, P.
Sledzik, H.
Oppermann, M.
Quay, Rüdiger orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kühn, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Lim, T.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Waltereit, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Mikulla, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Ambacher, O.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hauptwerk
6th European Microwave Integrated Circuits Conference, EuMIC 2011. Proceedings
Konferenz
European Microwave Integrated Circuits Conference (EuMIC) 2011
European Microwave Week (EuMW) 2011
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English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • InAIGaN

  • GaN

  • MMIC

  • high-power amplifier

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