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  4. Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures
 
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2014
Journal Article
Titel

Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

Abstract
We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm(-1) (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.
Author(s)
Hofstetter, D.
Bour, D.P.
Kirste, L.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Zeitschrift
Applied Physics Letters
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DOI
10.1063/1.4883864
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
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