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  4. Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
 
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2012
Conference Paper
Title

Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

Abstract
We report on the most aggressively scaled ferroelectric field effect transistor so far. These were successfully fabricated using ferroelectric Si:HfO 2 in a 28 nm HKMG stack (TiN/Si:HfO 2/SiO 2/Si). For a ± 5 V program/erase operation with pulses as short as 20 ns, reliable threshold voltage shifts were observed resulting in a memory window of about 0.9 V. We further demonstrate endurance characteristics matching demands of current nonvolatile memories utilizing wear leveling. Low retention loss was observed and extrapolated 10-year data storage can be expected.
Author(s)
Müller, J.
Yurchuk, E.
Schlösser, T.
Paul, J.
Hoffmann, R.
Müller, S.
Martin, D.
Slesazeck, S.
Polakowski, P.
Sundqvist, J.
Czernohorsky, M.
Seidel, K.
Kücher, P.
Boschke, R.
Trentzsch, M.
Gebauer, K.
Schröder, U.
Mikolajick, T.
Mainwork
Symposium on VLSI Technology, VLSIT 2012  
Conference
Symposium on VLSI Technology (VLSIT) 2012  
DOI
10.1109/VLSIT.2012.6242443
Language
English
CNT  
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