Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Abstract
Based on two low-noise amplifier (LNA) millimeterwave integrated circuits (MMICs), this paper reports on a comparison between a 35-nm and a 50-nm gate-length metamorphic high-electron-mobility transistor technology. The LNA targets applications in an extended W-band with an operating frequency between 67-116 GHz. Both MMICs yield an
