Effect of Fe-Ga pairs dissociation and association processes on recombination lifetimes in multicrystalline Si solar cells
Abstract
The recombination properties of Fe-Ga pairs in Ga-doped multicrystalline silicon wafers is investigated by means of effective lifetime measurements using quasi-steady-state photoconductance (QSSPC) and deep level spectroscopy (DLTS) techniques. A procedure to calculate active Fe concentrations in Ga-doped mc-Si wafers is developed based on the recombination parameters obtained from this study. The effect of Fe-Ga association and dissociation on solar cell output characteristics is simulated using PC-1D and experimental prove is given. In addition, the diffusion coefficient of iron in Ga-doped mc-Si is measured by monitoring the re-pairing effective lifetime decay as function of time.
