• English
  • Deutsch
  • Log In
    Password Login
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Low dielectric constant materials for interlayer dielectric
 
  • Details
  • Full
Options
1998
Journal Article
Titel

Low dielectric constant materials for interlayer dielectric

Abstract
The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 mu m one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements. In the article we survey currently used low dielectric constant materials and future trends for micro-electronic applications.
Author(s)
Treichel, H.
Ruhl, G.
Ansmann, P.
Wurl, R.
Müller, C.
Zeitschrift
Microelectronic engineering
Thumbnail Image
DOI
10.1016/S0167-9317(97)00185-8
Language
English
google-scholar
IFT
Tags
  • dielectric thin films

  • integrated circuit metallisation

  • permittivity

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022