A compact IGBT driver for high temperature applications
This paper describes the basic principles and experimental results of a compact IGBT gate driver for high temperature applications. The presented concept is especially dedicated to IGBT drivers which must provide high galvanic insulation at high ambient temperatures. In contrast to other well known approaches, the new concept is well suited for designs of very small size and with high insulation voltage. This makes these drivers an optimum solution for any kind of mechatronic system integration. The use of a special ferrite material with a Curie temperature far above the maximum ambient temperature and a consistent renunciation of temperature critical devices like electrolytic capacitors ensures a reliable operation up to ambient temperatures of 125°C. The high operating temperature, the noise immunity and the very small size make the new driver ideally suitable for a mechatronic integration into power semiconductor modules.