Indium-Tin-Oxide (ITO) layer integration in single-polysilicon standard CMOS processes to improve the CTE in photogate pixels

To solve charge transfer efficiency (CTE) problems present in photogate (PG) pixels fabricated in single polysilicon layer standard CMOS processes, integration of an overlapping ITO layer is here proposed which shows higher optical sensitivity in the UV-VIS part of the spectra if compared to polysilicon-gates and enables 100% CTE.