InAs/GaSb type-II short-period superlattice (SL) photodiodes have been shown to be very promising for 2nd and 3rd generation thermal imaging systems with excellent detector performance. A multi-wafer molecular beam epitaxy (MBE) growth process on 3"-GaSb substrates, which allows simultaneous growth on five substrates with excellent homogeneity has been developed. A reliable III/V-process technology for badge processing of single-color and dual-color FPAs has been set up to facilitate fabrication of mono- and bi-spectral InAs/GaSb SL detector arrays for the mid-IR spectral range. Mono- and bispectral SL camera systems with different pitch and number of pixels have been fabricated. Those imaging systems show excellent electro-optical performance data with a noise equivalent temperature difference (NETD) around 10 mK.
