Piezoresistive pressure sensor, has substrate with insulation layer, and resistor element arranged in pressure-sensitive area of substrate, where resistor element is defined by portion of semiconductor layer arranged on insulation layer

The sensor has a substrate including an insulation layer (108) arranged on a substrate layer (102), and a semiconductor layer (112) arranged on the insulation layer. A resistor element (110) is arranged in a pressure-sensitive area of the substrate, where the resistor element is defined by a portion (118) of the semiconductor layer. A trench (116) extends from the remaining portion (120) of the semiconductor layer up to the insulation layer, where the trench is filled with an insulating material (126). An independent claim is also included for a method for manufacturing the pressure sensor.