Verfahren zum Planarisieren einer Substratoberflaeche

A method of planarising a substrate surface, with height differences caused by metallic structures (140), involves applying a titanium compound layer (180, 200) onto the top and side faces of the structures (140) and then carrying out O3-activated deposition of SiO2 or SiOF (220) from a precursor onto the substrate surface. Preferably, the titanium compound layer (180, 200) consists of TiN, TiON, TiW, TiC and/or TiCON, applied by sputtering or CVD. USE - E.g. in the production of highly integrated circuits. ADVANTAGE - The method produces improved planarity compared with conventional TEOS processes and improved void-free filling of extremely narrow interspaces of down to one-tenth of a micron in a simple and inexpensive manner without the need for additional steps such as back-etching or chemical-mechanical polishing.