Options
Patent
Title
Asymmetrical memristor
Abstract
Embodiments of the present invention provide a memristor comprising a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode. Thereby, the memristor is adapted to obtain an asymmetrical current density distribution in the memristive layer.
Inventor(s)
Link to:
Patent Number
EP50598
Publication Date
2014
Language
English