Patent
Title

Racetrack memory array with integrated magnetic tunnel junction reader/pinning site

Other Title
Racetrack-Speicherzellenfeld mit integriertem magnetischem Tunnelübergang als Leser/Pinning-Ort
Abstract
A magnetic racetrack memory array device is disclosed which includes a racetrack layer on a magnetic tunnel junction (MTJ) layer over a metallization layer on a substrate. This approach allows for the manufacture of racetrack layers without damaging these layers during MTJ patterning.
Inventor(s)
Wagner-Reetz, Maik  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Wislicenus, Marcus  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Parkin, Stuart S. P.
Link to:
Patent Number
EP4009370 A1
Publication Date
June 8, 2022
Language
English