Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement

The method involves providing a support substrate (1) and forming intermediate layers (2a,2b) on the support substrate. A semiconductor layer (3) comprising silicon-based dielectric and silicon nano-crystals, is formed on the intermediate layers arranged on the substrate. The semiconductor layer is annealed at a temperature of 700[deg] C for preset time duration. A portion of support substrate is removed to access the semiconductor layer. An independent claim is included for a semiconductor component.