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Patent
Title

Monolithic optoelectronic TWE-component structure

Abstract
Monolithic optoelectronic TWE-component structure for high frequencies and low optical insertion loss. A monolithic optoelectronic device has a spot-size converter optically connected to a waveguide. The overclad (58) extending over the core (54) of the waveguide is thinner and more highly doped than the overclad of the spot-size converter. This structure can be made by applying a process of selective etching and enhanced regrowth to create selective regions of the overclad (58) of different thickness or doping.
Link to Espacenet
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=US&NR=20080122909P
Patent Number
20080122909
Publication Date
2010
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
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