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Patent
Title
Verwendung einer mikroporoesen Siliziumstruktur als photolumineszente Strukture
Other Title
Process for the production of photoluminescent silicon structures
Abstract
In a process for the production of photoluminescent silicon structures, a silicon wafer is immersed and anodized in an acid bath, whereby the monocrystalline silicon of the silicon wafer is converted into a microporous, photoluminescent silicon layer at least in areas. In order to maintain the stability over time of the photoluminescence of the silicon structure produced in this way, the process according to the invention requires the anodic side of the silicon wafer to be exposed to an illumination for part of the time during which it is immersed and anodized in the acid bath.
Inventor(s)
Richter, A.
Steiner, P.
Lang, W.
Patent Number
1991-4126954
Publication Date
1994
Language
German