Verfahren zum zwischenschichtfreien Verbinden von Substraten, Vorrichtung zur Durchfuehrung einer Plasmabehandlung sowie deren Verwendung

(A1) Die Erfindung betrifft ein Verfahren zum zwischenschichtfreien Verbinden von Substraten sowie eine Vorrichtung zur Durchfuehrung einer Plasmabehandlung. Weiterhin betrifft die Erfindung die Verwendung der Vorrichtung zum Bonden von Halbleitersubstraten.

DE 102009020163 A1 UPAB: 20101213 NOVELTY - The method involves producing plasma between a bonding surface and an electrode by corona discharge. The distance between the bonding surface and the electrode is between 3 millimeter and 5 centimeter, with the provision that the plasma does not touch the bonding surface. The corona discharge takes place by a gas pressure between 0.5 bars and 1.5 bars. The gas used for corona discharge is selected from the group consisting of noble gases, molecular gases, particularly oxygen, nitrogen, hydrogen and mixture of the gases. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device for executing a plasma treatment using corona discharge. USE - Method for interlayer free connection of two semiconductor substrates through bonding by pretreatment. ADVANTAGE - The method involves producing plasma between a bonding surface and an electrode by corona discharge, and hence ensures strong and effective connection between the two semiconductor substrates.