Monolithisch integrierte BH-Laserstruktur als Verstaerkerelement mit integrierter Taperung der aktiven Laserschicht

DE2005015673 U UPAB: 20060302 NOVELTY - The structure has a heating resistor contacted over contact pads on an upper side of the structure, where the pads are arranged at same height. A diffusion active laser layer (ALS) is laterally bordered under formation of a laser film on two etching cavities and with a front facet (FF). The layer exhibits integrated tapering (TP) in a lateral direction towards the facet during formation of the structure as a reinforcement unit. USE - Used as a reinforcement unit. ADVANTAGE - The diffusion active laser layer exhibits integrated tapering in the lateral direction towards on the front facet during the formation of the structure as the reinforcement unit, thus provides optimal light on the front facet. The structure is easily producible and well adjustable.