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Patent
Title
Verfahren zur Erzeugung von Metallhalogeniden oder Metalloxidhalogeniden aus Metall-Sauerstoffverbindungen oder Metallen sowie Verwendung des Verfahrens
Other Title
Method for the generation of metal halides or metal oxyhalides from metal oxygen compounds or metals and use of the method
Abstract
Producing metal halides or metal oxide halides from metal-oxygen compounds or metals, comprises (i) generating at least one halogenating reagent which is gaseous at conditions prevailing in step (i), and (ii) reacting the halogenating reagent with the metal-oxygen compounds or metals for converting the metal-oxygen compounds or metals to metal halides or metal oxide halides, discharging the metal halides or metal oxide halides into gaseous aggregation state, and transferring the metal halides or metal oxide halides from the gaseous aggregation state to liquid- or solid aggregation state. #CMT# : #/CMT# Producing metal halides or metal oxide halides from metal-oxygen compounds or metals, comprises (i) generating at least one halogenating reagent which is gaseous at conditions prevailing in step (i), and (ii) reacting the gaseous halogenating reagent with the metal-oxygen compounds or metals for converting the metal-oxygen compounds or metals to metal halides or metal oxide halides, discharging the metal halides or metal oxide halides into gaseous aggregation state from the step (ii), and transferring the metal halides or metal oxide halides from the gaseous aggregation state to liquid- or solid aggregation state or introducing into reverse reaction of its formation. The second reaction step is locally separated from the first reaction step. The step (ii) is followed by the step (i). The halogenating reagent produced in the step (i) is transported to the step (ii) using a gas stream. USE: The method is useful for recycling metals, preferably indium from flat panel displays of mobile phones, laptops, televisions, monitors and displays (claimed). ADVANTAGE: The method is simple and can be easily controlled. The drawing shows a schematic representation of the flow reactor (Drawing includes non-English language text). Preferred Method: The gaseous halogenating reagent is generated in the step (i) from a solid- or liquid compound by dissociation, evaporation or sublimation. The discharge of the produced metal halide or the metal oxide halide into the gaseous state from the step (ii) is carried out using the gas stream. The gas stream successively passes through the steps (i) and (ii). A pressure of 0.1-2 bars, preferably atmospheric pressure is adjusted in the step (i) and/or (ii). The temperature in the step (a) is selected such that the halogenating reagent exhibits a partial gas pressure of >= 0.05 bars, preferably 0.5-0.7 bars. The temperature in the step (b) is selected such that the metal halide or the metal oxide halide exhibits a partial gas pressure of >= 0.01 bars, preferably 0.08-0.2 bars. The gas stream is loaded with aluminum chloride and/or iron(III) chloride when the metal halides or metal oxide halides exhibit a boiling- or sublimation temperature of greater than 800[deg] C. The metal-oxygen compounds or metals and/or the gas stream before the reaction, is mixed with a reagent which reacts with oxygen of the metal-oxygen compounds to form a compound having a negative free standard formation, preferably sulfur, carbon or a carbon-containing formulation. The metal-oxygen compounds or metals are freed and/or crushed before the reaction of optionally present organic impurities. The metal-oxygen compounds or metals are bonded on or in a matrix comprising an inorganic matrix, preferably glass or ceramic, preferably flat panel displays of mobile phones, laptops, televisions, monitors or displays. The method is continuously carried out. The obtained metal halide or metal oxide halide is reduced in a subsequent step to elemental metal. The method is carried out in a flow reactor comprising a first- and a second reaction chamber, which are separately temperature-controllable, where first- and second reaction chambers of the steps (i) and (ii) correspond to the reaction chambers of the flow reactor through which a gas stream flow in the direction from the first- to the second reaction chamber, and the metal-oxygen compounds are conveyable as a continuous bulk through the first- and the second reaction chambers. The method comprises producing indium chloride from indium oxide comprising (a) generating hydrogen chloride by thermal decomposition of ammonium chloride at a temperature of 100-450[deg] C, preferably 300-400[deg] C, and (b) converting produced hydrogen chloride using a gas stream, reacting hydrogen chloride with indium oxide at a temperature of 300-600[deg] C, preferably 400-500[deg] C to obtain indium chloride, and discharging the produced indium chloride using the gas stream into the gaseous aggregation state from the step (b) and deposited as a solid. Preferred Components: The halogenating reagent comprises hydrogen halides, preferably hydrogen chloride, hydrogen bromide or hydrogen iodide; elemental halogens, preferably chlorine, bromine or iodine; completely or partially halogenated and optionally saturated hydrocarbons, preferably carbon tetrachloride or tetrachloroethylene; completely or partially halogenated silanes or siloxanes, preferably silicon tetrachloride; and/or their combinations. The solid compound comprises substances formed by heating hydrogen halides or elemental halogens, preferably ammonium chloride, ammonium bromide, ammonium iodide, aluminum chloride hexahydrate, iron(III) chloride hexahydrate, iron(ii) chloride hexahydrate, magnesium chloride hexahydrate and/or their combinations. The liquid compound comprises compounds which are convertible by evaporation into the halogenating reagent. The gas of the gas stream comprises inert gases, preferably nitrogen, noble gases or carbon dioxide and/or their combinations. The metal-, metal of the metal-oxygen compounds and metal halide or metal oxide halide comprises metals, metal halides or metal oxide halides having boiling- or sublimation temperature of less than 1700[deg] C, preferably indium, gallium, germanium, antimony, bismuth, tellurium, niobium, tantalum, titanium, zirconium, hafnium or rare earth metals.
Inventor(s)
Binnewies, Michael
Bokelmann, Katrin
Patent Number
102013004172
Publication Date
2014
Language
German