Sensorelement

The sensor element uses a floating-gate field-effect transistor (10) which is sensitive to the physical parameter to be detected. The floating gate (20) may be supplied with charge via a tunnel effect. The field effect transistor is formed in a substrate (12), with the floating gate formed so that a section of it overlies a highly doped region (22), this region forming the tunnel region. The charge may be supplied to the floating gate and removed from it via a programme unit. USE - E.g. in neuronal networks. To reduce noise in large photosensor arrays. ADVANTAGE - Non-volatile storage of charge corresponding to detected physical parameter by transistor floating gate.