Verfahren zur modularen Kontaktierung mehrlagiger Halbleiterbauelemente

The invention proposes a process for the modular contacting of multi-layer semiconductor components, said process permitting the low-impedance contacting both of semiconductor areas and metallic layers of lateral structural sizes in the submicron range with high reliability. The contact holes or vias of the layers to be contacted are first filled selectively with pure aluminium or copper at temperatures below 450 degrees C. The metallic layer serving as a conductor is then applied, and a concentration compensation is adjusted between the conductor layer and the selective aluminium or copper layer by tempering. Since the entire process can be performed at temperatures below 450 degrees C, it is preferably suitable for the multi-layer metallization of semiconductor elements.