Verfahren zum Herstellen duenner Halbleitersubstratschichten

The method involves using two silicon wafers, one wafer (1) having a scattering layer provided in it. A buried silicon layer is initially provided in this silicon layer through ion implantation (3). An insulation layer (2), preferably an oxide layer, is then provided on the top of this implanted wafer and/or on the surface of the second wafer. The scattering layer is at the penetration depth of the inserted ions and/or it prevents diffusion of the ions out of the layer. The ions may be of metal or rare earth element. The two wafers are the connected so that the insulation layer is enclosed between the second wafer and the top layer of the initial wafer. The temperature is then increased such that a silicide layer is produced through melting. The part of the initial wafer not acting as the top layer is then separated from the connected structure. USE/ADVANTAGE - For high integration semiconductor electronics using CMOS technology. Provides simpler method of providing thinner semiconduct or layer, e.g. 0.1 to 0.3 micron thickness.