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  4. Verfahren zur Abscheidung einer Siliziumnitrid-Polymerschicht auf einem Substrat
 
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Patent
Title

Verfahren zur Abscheidung einer Siliziumnitrid-Polymerschicht auf einem Substrat

Other Title
Process for the deposition of a silicon nitride polymer layer on a substrate
Abstract
In a process for the deposition of a silicon nitride layer and/or a silicon nitride polymer layer, good layer quality is obtained by simple handling with an enhanced coverage ratio by the fact that liquid or cyclical silazane is used as the initial substance and is vaporized in a gas chamber, the vaporized silazane is transferred distributed to a reaction chamber via an outflow shower in which the silazane is deposited on a substrate within a high-frequency field.
Inventor(s)
Klumpp, A.
Hacker, E.
Link to:
Espacenet
Patent Number
1992-4212501
Publication Date
1993
Language
German
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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