Verfahren zum Herstellen einer kristallinen organischen Halbleiterschicht

The method involves applying (10) a layer of an organic semiconductor material on a carrier. The organic semiconductor material layer is heated at a temperature, so as to generate (20) recrystallization of organic semiconductor material and for increasing the crystallinity of the organic semiconductor material. A cooling down layer is formed such that the raised crystallinity of the organic semiconductor material is maintained. The organic semiconductor material is applied to the region of layer having thickness of 20-200 nm.