Patent
Title

Verfahren zum Herstellen einer kristallinen organischen Halbleiterschicht

Other Title
Manufacturing method of crystalline organic semiconductor layer used during manufacture of e.g. organic thin film transistor, involves heating organic semiconductor material at specific temperature, to increase material crystallinity
Abstract
The method involves applying (10) a layer of an organic semiconductor material on a carrier. The organic semiconductor material layer is heated at a temperature, so as to generate (20) recrystallization of organic semiconductor material and for increasing the crystallinity of the organic semiconductor material. A cooling down layer is formed such that the raised crystallinity of the organic semiconductor material is maintained. The organic semiconductor material is applied to the region of layer having thickness of 20-200 nm.
Inventor(s)
Burghart, Markus
Link to Espacenet
Patent Number
102012043875
Publication Date
2010
Language
German