Halbleiterstrukturen mit vorteilhaften Hochfrequenzeigenschaften sowie Verfahren zur Herstellung derartiger Halbleiterstrukturen

Process for the production of a semiconductor structure having a highly conductive buried layer, said process consisting of the following steps: application of an insulation layer on a first surface of a first semiconductor substrate, application of an insulation layer on a surface of a surface consisting of a highly conductive material, said layer being separated from the first semiconductor substrate, and connection of the two insulation layers.