Verfahren zum Erzeugen einer isolierten, einkristallinen Siliziuminsel

A process with the following steps is proposed for the enhanced electrical and thermal insulation of a silicon island: oxygen implantation in a highly doped monocrystalline silicon area to generate a buried silicon dioxide layer, depositing of a silicon epitaxy layer with comparably low doping, generation of a trench etching mask and definition of the trench by means of photolithography, etching of the trench, insulation of the same, filling of the same, generation of a backside mask, local opening of the backside mask by means of photolithography and anisotropic etching of the silicon wafer backside through the local opening of the mask down to the buried silicon dioxide layer serving as etching stop.