Verfahren zum Erzeugen einer Siliziumdioxidschicht auf Oberflaechenabschnitten einer Struktur

Prodn. of a SiO2 layer on surface sections of a structure involves (a) anisotropically dry etching a semiconductor arrangement (200) to produce, in its surface, a structure (202) with sidewall sections (208) and a bottom section (206); (b) cleaning the structure for complete removal of etching residues from the sidewall sections (208) while retaining modifications of the bottom section; and (c) depositing SiO2, using an organic silicon precursor and ozone at 200-400 deg.C and 0.2-1.0 x 105 Pa pressure, onto the structure (202). USE - E.g. to produce a spacer in a hole or trench to achieve lateral isolation. ADVANTAGE - The method ensures that damage, modification and/or contamination occurs entirely at the bottom of the structure so that SiO2 on the bottom section is suppressed, thus eliminating the need for an additional etching operation.