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  4. InAs/(GaIn)Sb superlattices for infrared detection
 
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1997
Conference Paper
Title

InAs/(GaIn)Sb superlattices for infrared detection

Other Title
InAs/(GaIn)Sb-Übergitter zur Detektion infraroter Strahlung
Abstract
We report on the growth and characterization of InAs/(GaIn)Sb superlattices (SLs) as well as on the fabrication and testing of SL infrared (IR) photodiodes. InAs/Ga(0.8)In(0.2)Sb SLs with individual layer thicknesses of 12 and 10 monolayers, respectively, were grown by molecular-beam epitaxy either directly on GaSb substrates or on GaAs substrates using a strain-relaxed GaSb buffer layer. To achieve strain compensation, SL growth was performed with alternating InSb-like and GaAs-like interfaces. IR n-on-p photodiodes employing a strain-optimized InAs/(GaIn)Sb SL as the active region were fabricated using standard III-V technology. SL photodiodes with cut-off wavelengths in the 7.5 to 8.5 mu m wavelength range showed at 77 K responsivities of 2 A/W and R0A products exceeding 10(exp3) ohm cm2.
Author(s)
Wagner, J.
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schmitz, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Pletschen, Wilfried  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weimar, U.
Herres, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Koidl, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII) 1997. Proceedings  
Conference
State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) 1997  
Electrochemical Society (Meeting) 1997  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InAs/(GaIn)Sb

  • IR detector

  • IR-Detektor

  • superlattice

  • Übergitter

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