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  4. Distributed amplifier MMIC with 21 dB gain and 90 GHz bandwidth using InP-based DHBTs
 
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2007
Conference Paper
Title

Distributed amplifier MMIC with 21 dB gain and 90 GHz bandwidth using InP-based DHBTs

Other Title
Verteilter Verstärker MMIC mit 21 dB Verstärkung und 90 Ghz Bandbreite basierend auf InP-DHBTs
Abstract
This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical communication systems (Ethernet). Using an InP DHBT technology, exhibiting cut-off frequency values of more than 275 GHz for both fT and fmax, the amplifier achieved a gain of 21 dB and a 90 GHz 3-dB bandwidth, resulting in a gain-bandwidth product (GBW) of 1 THz. To our best knowledge, this represents the highest gain bandwidth product achieved for single-stage amplifiers in any technology reported to date.
Author(s)
Schneider, K.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Driad, Rachid  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Makon, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
29th IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC 2007  
Conference
Compound Semiconductor Integrated Circuit Symposium (CSIC) 2007  
DOI
10.1109/CSICS07.2007.17
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • bipolar integrated circuit

  • distributed amplifier

  • driver circuits

  • heterojunction bipolar transistor

  • indium compounds

  • MMIC

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