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4.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density

Poster presented at 11th European Conference on Silicon Carbide & Related Materials, September 25th - 29th, 2016, Halkidiki, Greece
: Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton

Poster urn:nbn:de:0011-n-4259693 (500 KByte PDF)
MD5 Fingerprint: 8139c15abc7f839d4cb3f167c152af6c
Erstellt am: 13.12.2016

2016, 1 Folie
European Conference on Silicon Carbide and Related Materials (ECSCRM) <11, 2016, Halkidiki>
European Commission EC
FP7-NMP; 604057; SPEED
Silicon Carbide Power Technology for Energy Eficient Devices
Poster, Elektronische Publikation
Fraunhofer IISB ()
Junction Barrier Schottky (JBS) Diode; DBC-Mounted; Floating Field Rings; 4H-SiC; Leistungselektronik

High-voltage 4H-SiC Junction Barrier Schottky diodes with a reverse breakdown voltage of over 4.5 kV and a turn-on voltage below 1 V have been fabricated. They achieved a forward current of 5 A at a forward voltage drop of 1.8 V and 20 A at 4.2 V. A low reverse leakage current of 0.3 μA at 1.2 kV and 37 μA at 3.3 kV was measured. The chip size was 7.3 mm x 7.3 mm, the active area 0.25 cm2 and the diode was able to handle a repetitive pulse current density of over 300 A/cm2 without degradation. Floating field rings in combination with a field-stop ring were used as edge termination to reach 73 % of the theoretical breakdown voltage. The epitaxial layer was 32 μm thick, with a nitrogen doping concentration of 1 x 1015 cm-3. The JBS diodes have been manufactured in a 100 mm SiC prototyping line, using well established processing technology, to achieve cost-efficient devices.