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Modeling the annealing of dislocation loops in implanted c-Si solar cells

Modellierung der Ausheilung von Versetzungsschleifen in implantierten monokristallinien Silicium-Solarzellen
: Wolf, F. Alexander; Martinez-Limia, Alberto; Stichtenoth, Daniel; Pichler, Peter

Postprint urn:nbn:de:0011-n-2869960 (463 KByte PDF)
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Erstellt am: 24.4.2014

IEEE Journal of Photovoltaics 4 (2014), Nr.3, S.851-858
ISSN: 2156-3381
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
c-Si; silicon; solar cells; dislocation loops

This paper is motivated by the question of how residual implantation damage degrades solar cell performance. In order to avoid such degradation, annealing processes of implanted c-Si solar cells use high thermal budgets. Still, implantation-induced dislocation loops may survive these processes. We derive two models for the annealing kinetics of dislocation loops that are suitable for the study of high thermal budgets: a model that is able to describe the parallel ripening of faulted and perfect dislocation loops and a model that explicitly implements the conservative and nonconservative processes associated with Ostwald ripening. Both models lead to a better agreement with the experiment than what has been published before.