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Comparison of spatially resolved carrier lifetimes in mc-Si with solar cell and material characteristics

 
: Glunz, S.W.; Hebling, C.; Warta, W.; Wettling, W.

:
Fulltext urn:nbn:de:0011-px-82203 (588 KByte PDF)
MD5 Fingerprint: 38d14c64105a14c63caab1b5a39637a3
Created on: 9.11.2012


IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE First World Conference on Photovoltaic Energy Conversion 1994. Vol.2 : Conference record of the Twenty Fourth IEEE Photovoltaic Specialists Conference 1994; Hilton Waikoloa Village, Waikoloa, Hawaii, December 5 - 9, 1994
Piscataway, NJ: IEEE Service Center, 1994
ISSN: 0160-8371
ISBN: 0-7803-1460-3
ISBN: 0-7803-1459-X
ISBN: 0-7803-1461-1
pp.1625-1628
World Conference on Photovoltaic Energy Conversion <1, 1994, Waikoloa/Hawaii>
Photovoltaic Specialists Conference <24, 1994, Waikoloa/Hawaii>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
We introduce a novel application of modulated free carrier absorption (MFCA) for measuring minority carrier lifetimes in multicrystalline silicon with high spatial resolution. The improved lateral resolution compared to other contactless techniques allows the correlation between these lifetime maps and solar cell characteristics as well as microscopic properties, like dislocations, precipitates, oxygen concentration, etc. Comparisons of the lifetime maps measured on the starting material and light beam induced current (LBIC) maps exhibit a very good qualitative correlation of the structures observed in both cases. In addition, correlations to microscopic characteristics like high dislocation density in regions with low lifetimes are investigated and a comparison with spatially resolved FT-IR measurements of the interstitial oxygen concentration is performed.

: http://publica.fraunhofer.de/documents/PX-8220.html